
NPN bipolar junction transistor designed for RF wideband applications. Features a 6V collector-emitter breakdown voltage and a 14GHz transition frequency. This surface mount component, housed in a SOT-343 package, offers a continuous collector current of 35mA and a maximum power dissipation of 210mW. Operating across a temperature range of -65°C to 150°C, it boasts a gain of 18.3dB.
NXP BFG325W/XR,115 technical specifications.
| Package/Case | SOT-343 |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Breakdown Voltage | 6V |
| Collector-emitter Voltage-Max | 6V |
| Contact Plating | Tin |
| Continuous Collector Current | 35mA |
| Emitter Base Voltage (VEBO) | 2V |
| Gain | 18.3dB |
| Gain Bandwidth Product | 14GHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 6V |
| Max Collector Current | 35mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 210mW |
| Mount | Surface Mount |
| Operating Frequency | 14000 MHz |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 14GHz |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for NXP BFG325W/XR,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
