NPN bipolar junction transistor designed for RF wideband applications. Features a 6V collector-emitter breakdown voltage and a 14GHz transition frequency. This surface mount component, housed in a SOT-343 package, offers a continuous collector current of 35mA and a maximum power dissipation of 210mW. Operating across a temperature range of -65°C to 150°C, it boasts a gain of 18.3dB.
Frequency14000 MHz
PackageSOT-343
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BFG325W/XR,115 technical specifications.
General
Package/Case
SOT-343
Collector Base Voltage (VCBO)
15V
Collector Emitter Breakdown Voltage
6V
Collector-emitter Voltage-Max
6V
Contact Plating
Tin
Continuous Collector Current
35mA
Emitter Base Voltage (VEBO)
2V
Gain
18.3dB
Gain Bandwidth Product
14GHz
Height
1mm
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
6V
Max Collector Current
35mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
210mW
Mount
Surface Mount
Operating Frequency
14000 MHz
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
RoHS Compliant
Yes
Transition Frequency
14GHz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
NXP BFG325W/XR,115 Datasheet
Download the complete datasheet for NXP BFG325W/XR,115 to view detailed technical specifications.
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