NPN Bipolar Junction Transistor (BJT) for RF wideband applications. Features a 17GHz gain bandwidth product and transition frequency. Operates with a collector-emitter voltage of 4.5V and a continuous collector current of 3mA. Packaged in a compact SOT-343 surface-mount case with tin plating. RoHS compliant and suitable for operation between -65°C and 150°C.
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NXP BFG403W,115 technical specifications.
| Package/Case | SOT-343 |
| Collector Base Voltage (VCBO) | 10V |
| Collector Emitter Breakdown Voltage | 4.5V |
| Collector Emitter Voltage (VCEO) | 4.5V |
| Collector-emitter Voltage-Max | 4.5V |
| Contact Plating | Tin |
| Continuous Collector Current | 3mA |
| Emitter Base Voltage (VEBO) | 1V |
| Gain | 22dB |
| Gain Bandwidth Product | 17GHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 4.5V |
| Max Collector Current | 3mA |
| Max Frequency | 17GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 16mW |
| Mount | Surface Mount |
| Operating Frequency | 17000 MHz |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 17GHz |
| Width | 1.35mm |
| RoHS | Compliant |
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