BFG520W,115

NPN RF Transistor 9GHz 20V 70mA SO Surface Mount

NPN RF transistor designed for wideband applications, featuring a 9 GHz gain bandwidth product and transition frequency. This surface mount device operates at frequencies up to 9000 MHz, with a maximum collector current of 70mA and a collector-emitter voltage of 15V. Encased in a compact SO package with tin plating, it offers a minimum hFE of 60 and a maximum power dissipation of 500mW, operating across a temperature range of -65°C to 150°C.

Frequency9GHz

PackageSO

MountingSurface Mount

PolarityNPN

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Technical Specifications

NXP BFG520W,115 technical specifications.

General

Package/Case	SO
Collector Base Voltage (VCBO)	20V
Collector Emitter Breakdown Voltage	15V
Collector-emitter Voltage-Max	15V
Contact Plating	Tin
Continuous Collector Current	70mA
Emitter Base Voltage (VEBO)	2.5V
Gain Bandwidth Product	9GHz
Height	1mm
hFE Min	60
Length	2.2mm
Max Collector Current	70mA
Max Frequency	9GHz
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Max Power Dissipation	500mW
Mount	Surface Mount
Operating Frequency	9000 MHz
Package Quantity	3000
Packaging	Tape and Reel
Polarity	NPN
Radiation Hardening	No
RoHS Compliant	Yes
Transition Frequency	9GHz
Width	1.35mm