NPN RF transistor designed for wideband applications, operating at frequencies up to 9 GHz. Features a 15V collector-emitter voltage and 70mA continuous collector current, with a maximum power dissipation of 500mW. Packaged in a surface-mount SO package with tin plating, this lead-free and RoHS-compliant component offers a gain of 17dB and a transition frequency of 9 GHz.
NXP BFG520W/X,115 technical specifications.
| Package/Case | SO |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 15V |
| Contact Plating | Tin |
| Continuous Collector Current | 70mA |
| Emitter Base Voltage (VEBO) | 2.5V |
| Frequency | 9GHz |
| Gain | 17dB |
| Gain Bandwidth Product | 9GHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 70mA |
| Max Frequency | 9GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 9000 MHz |
| Output Power | 500mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 9GHz |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for NXP BFG520W/X,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.