NPN Bipolar Junction Transistor (BJT) for RF applications, operating up to 9GHz with a transition frequency of 9GHz. Features a maximum collector-emitter voltage of 15V and a continuous collector current of 120mA. Offers a gain of 15dB and an output power of 21dBm. Packaged in an SC surface mount case with tin plating, this lead-free component operates between -65°C and 175°C with a maximum power dissipation of 650mW.
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NXP BFG541,115 technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 15V |
| Contact Plating | Tin |
| Continuous Collector Current | 120mA |
| Emitter Base Voltage (VEBO) | 2.5V |
| Gain | 15dB |
| Height | 1.7mm |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 120mA |
| Max Frequency | 9GHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 650mW |
| Mount | Surface Mount |
| Operating Frequency | 9000 MHz |
| Output Power (dBm) | 21dBm |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 9GHz |
| Width | 3.7mm |
| RoHS | Compliant |
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