NPN bipolar junction transistor designed for high-frequency applications. Features a 12V collector-emitter breakdown voltage and a 35mA continuous collector current. Operates at a maximum frequency of 6GHz with a 12V collector-emitter voltage. Packaged in a compact SOT143B (TO-253-4) surface-mount case. Offers a minimum hFE of 40 and a maximum power dissipation of 300mW.
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| Package/Case | TO-253-4 |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 12V |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | 35mA |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 6GHz |
| Height | 1mm |
| hFE Min | 40 |
| Length | 3mm |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 35mA |
| Max Frequency | 6GHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Transition Frequency | 6GHz |
| Width | 1.4mm |
| RoHS | Compliant |
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