The BFQ67W,135 is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 10V and a maximum collector current of 50mA. It operates over a temperature range of -65°C to 175°C and has a maximum power dissipation of 300mW. The transistor is packaged in a SOT-323 case and is RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NXP BFQ67W,135 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 10V |
| Collector Emitter Voltage (VCEO) | 10V |
| Collector-emitter Voltage-Max | 10V |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | 50mA |
| Emitter Base Voltage (VEBO) | 2.5V |
| Frequency | 8GHz |
| hFE Min | 60 |
| Max Collector Current | 50mA |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| RoHS Compliant | Yes |
| Transition Frequency | 8GHz |
| RoHS | Compliant |
Download the complete datasheet for NXP BFQ67W,135 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
