NPN bipolar junction transistor (BJT) for surface mount applications. Features a 9GHz transition frequency and 120mA continuous collector current. Operates with a collector-emitter voltage of 15V and offers 21dBm output power. Packaged in a TO-236AB (SOT23) case with tin plating, this RoHS compliant component is rated for 500mW power dissipation and operates between -65°C and 175°C.
Frequency9GHz
PackageTO-236AB
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BFR540,215 technical specifications.
General
Package/Case
TO-236AB
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
15V
Collector Emitter Voltage (VCEO)
15V
Collector-emitter Voltage-Max
15V
Contact Plating
Tin
Continuous Collector Current
120mA
Emitter Base Voltage (VEBO)
2.5V
Frequency
9GHz
Gain Bandwidth Product
9GHz
Height
1mm
Length
3mm
Max Breakdown Voltage
15V
Max Collector Current
120mA
Max Frequency
9GHz
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Operating Frequency
9000 MHz
Output Power (dBm)
21dBm
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
500mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
9GHz
Weight
0.00709oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
NXP BFR540,215 Datasheet
Download the complete datasheet for NXP BFR540,215 to view detailed technical specifications.
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