NPN Bipolar Junction Transistor for RF applications, featuring a 9GHz transition frequency and 9GHz operating frequency. This single-element transistor offers a maximum collector current of 120mA and a maximum power dissipation of 500mW. Key voltage ratings include a collector-emitter voltage of 15V and a collector-base voltage of 20V. Designed for surface mounting in a TO-236AB package, it operates within a temperature range of -65°C to 175°C.
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| Package/Case | TO-236AB |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 15V |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | 120mA |
| Emitter Base Voltage (VEBO) | 2.5V |
| Frequency | 9GHz |
| hFE Min | 100 |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 120mA |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power (dBm) | 21dBm |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 500mW |
| RoHS Compliant | Yes |
| Transition Frequency | 9GHz |
| RoHS | Compliant |
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