Surface mount RF transistor featuring an NPN bipolar junction transistor (BJT) configuration. This single-element transistor offers a maximum collector-emitter voltage of 15V and a maximum DC collector current of 0.025A, with a power dissipation of 300mW. It is housed in a 3-pin TO-236AB (SOT-23) plastic package with gull-wing leads, suitable for surface mounting. Key performance specifications include a minimum DC current gain of 40 at 15mA/10V, a typical transition frequency of 5000MHz, and a typical noise figure of 3dB.
PackageTO-236AB
MountingSurface Mount
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Technical Specifications
NXP BFR92A/A2,235 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT-23
Package/Case
TO-236AB
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
3(Max)
Package Width (mm)
1.4(Max)
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1.1(Max)
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
15V
Maximum Collector Base Voltage
20V
Maximum Emitter Base Voltage
2V
Maximum DC Collector Current
0.025A
Maximum Power Dissipation
300mW
Minimum DC Current Gain
40@15mA@10V
Minimum DC Current Gain Range
30 to 50
Maximum Transition Frequency
5000(Typ)MHz
Maximum Noise Figure
3(Typ)dB
Typical Output Capacitance
0.6pF
Min Operating Temperature
-65°C
Max Operating Temperature
175°C
Operational Bias Conditions
10V/15mA
Typical Power Gain
14dB
Compliance
Cage Code
H1R01
EU RoHS
Yes
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
NXP BFR92A/A2,235 Datasheet
Download the complete datasheet for NXP BFR92A/A2,235 to view detailed technical specifications.
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