
NPN RF transistor designed for wideband applications, operating at frequencies up to 5 GHz. Features a 15V collector-emitter breakdown voltage and a 25mA continuous collector current. Housed in a compact SOT-323 surface-mount package with tin plating. Offers a typical gain of 14dB and a maximum power dissipation of 300mW, suitable for operation between -65°C and 150°C.
NXP BFR92AW,115 technical specifications.
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 15V |
| Contact Plating | Tin |
| Continuous Collector Current | 25mA |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 5GHz |
| Gain | 14dB |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 25mA |
| Max Frequency | 5GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 5000 MHz |
| Output Power | 300mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 5GHz |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for NXP BFR92AW,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
