NPN RF transistor designed for wideband applications, operating at frequencies up to 5 GHz. Features a 15V collector-emitter breakdown voltage and a 25mA continuous collector current. Housed in a compact SOT-323 surface-mount package with tin plating. Offers a typical gain of 14dB and a maximum power dissipation of 300mW, suitable for operation between -65°C and 150°C.
Frequency5GHz
PackageSOT-323
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BFR92AW,115 technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
15V
Collector Emitter Voltage (VCEO)
15V
Collector-emitter Voltage-Max
15V
Contact Plating
Tin
Continuous Collector Current
25mA
Emitter Base Voltage (VEBO)
2V
Frequency
5GHz
Gain
14dB
Height
1mm
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
15V
Max Collector Current
25mA
Max Frequency
5GHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Operating Frequency
5000 MHz
Output Power
300mW
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
5GHz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
NXP BFR92AW,115 Datasheet
Download the complete datasheet for NXP BFR92AW,115 to view detailed technical specifications.
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