PNP RF BJT transistor, single element, for surface mount applications. Features a 15V maximum collector-emitter voltage and 0.025A maximum DC collector current. Offers 300mW maximum power dissipation and a typical transition frequency of 5000MHz. Housed in a 3-pin TO-236AB (SOT) plastic package with gull-wing leads.
PackageTO-236AB
MountingSurface Mount
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Technical Specifications
NXP BFT92,215 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
TO-236AB
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
3(Max)
Package Width (mm)
1.4(Max)
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1.1(Max)
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Package Orientation
Yes
Package Orientation Marking Type
Beveled Edge
Jedec
TO-236AB
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
15V
Maximum Collector Base Voltage
20V
Maximum Emitter Base Voltage
2V
Maximum DC Collector Current
0.025A
Maximum Power Dissipation
300mW
Minimum DC Current Gain
20@14mA@10V
Minimum DC Current Gain Range
2 to 30
Maximum Transition Frequency
5000(Typ)MHz
Maximum Noise Figure
2.5(Typ)dB
Typical Input Capacitance
0.8pF
Typical Output Capacitance
0.75pF
Min Operating Temperature
-65°C
Max Operating Temperature
175°C
Operational Bias Conditions
10V/14mA
Typical Power Gain
18dB
Compliance
Cage Code
H1R01
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
NXP BFT92,215 Datasheet
Download the complete datasheet for NXP BFT92,215 to view detailed technical specifications.
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