PNP RF BJT transistor, single element, for surface mount applications. Features a 15V maximum collector-emitter voltage and 0.025A maximum DC collector current. Offers 300mW maximum power dissipation and a typical transition frequency of 5000MHz. Housed in a 3-pin TO-236AB (SOT) plastic package with gull-wing leads.
PackageTO-236AB
MountingSurface Mount
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Technical Specifications
NXP BFT92,215 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | TO-236AB |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 3(Max) |
| Package Width (mm) | 1.4(Max) |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1.1(Max) |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Package Orientation | Yes |
| Package Orientation Marking Type | Beveled Edge |
| Jedec | TO-236AB |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 15V |
| Maximum Collector Base Voltage | 20V |
| Maximum Emitter Base Voltage | 2V |
| Maximum DC Collector Current | 0.025A |
| Maximum Power Dissipation | 300mW |
| Minimum DC Current Gain | 20@14mA@10V |
| Minimum DC Current Gain Range | 2 to 30 |
| Maximum Transition Frequency | 5000(Typ)MHz |
| Maximum Noise Figure | 2.5(Typ)dB |
| Typical Input Capacitance | 0.8pF |
| Typical Output Capacitance | 0.75pF |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 175°C |
| Operational Bias Conditions | 10V/14mA |
| Typical Power Gain | 18dB |
Compliance
| Cage Code | H1R01 |
| EU RoHS | Yes |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
NXP BFT92,215 Datasheet
Download the complete datasheet for NXP BFT92,215 to view detailed technical specifications.
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