
PNP RF transistor with a 4 GHz gain bandwidth product, designed for wideband applications. Features a 12V collector-emitter voltage and 50mA continuous collector current. Packaged in a compact SOT-323 (SC-70) surface-mount case with tin plating. Operates across a wide temperature range from -65°C to 150°C, with a maximum power dissipation of 300mW. This RoHS compliant component is supplied on tape and reel.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NXP BFT93W,115 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 12V |
| Contact Plating | Tin |
| Continuous Collector Current | 50mA |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 4GHz |
| Gain Bandwidth Product | 4GHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Collector Current | 50mA |
| Max Frequency | 4GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 4000 MHz |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4GHz |
| Weight | 0.002116oz |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for NXP BFT93W,115 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
