PNP RF transistor with a 4 GHz gain bandwidth product, designed for wideband applications. Features a 12V collector-emitter voltage and 50mA continuous collector current. Packaged in a compact SOT-323 (SC-70) surface-mount case with tin plating. Operates across a wide temperature range from -65°C to 150°C, with a maximum power dissipation of 300mW. This RoHS compliant component is supplied on tape and reel.
Frequency4GHz
PackageSOT-323
MountingSurface Mount
PolarityPNP
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Technical Specifications
NXP BFT93W,115 technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
15V
Collector Emitter Breakdown Voltage
12V
Collector Emitter Voltage (VCEO)
12V
Collector-emitter Voltage-Max
12V
Contact Plating
Tin
Continuous Collector Current
50mA
Emitter Base Voltage (VEBO)
2V
Frequency
4GHz
Gain Bandwidth Product
4GHz
Height
1mm
Lead Free
Lead Free
Length
2.2mm
Max Collector Current
50mA
Max Frequency
4GHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Operating Frequency
4000 MHz
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
300mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
4GHz
Weight
0.002116oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
NXP BFT93W,115 Datasheet
Download the complete datasheet for NXP BFT93W,115 to view detailed technical specifications.
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