
Automotive-grade NPN RF BJT transistor, surface mountable in a TO-236-3 package. Features a 16V collector-emitter voltage, 10mA continuous collector current, and 40mA maximum collector current. Offers a 11GHz gain bandwidth product and transition frequency, with a minimum hFE of 60 and 18dB gain. Operates across a -40°C to 150°C temperature range with 450mW maximum power dissipation.
NXP BFU530AR technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 24V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector-emitter Voltage-Max | 16V |
| Contact Plating | Tin |
| Continuous Collector Current | 10mA |
| Emitter Base Voltage (VEBO) | 2V |
| Gain | 18dB |
| Gain Bandwidth Product | 11GHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 40mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 450mW |
| Mount | Surface Mount |
| Operating Frequency | 900 MHz |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101 |
| Transition Frequency | 11GHz |
| Weight | 0.00031oz |
| RoHS | Compliant |
Download the complete datasheet for NXP BFU530AR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
