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Technical Specifications
NXP BFU660F,115 technical specifications.
General
| Package/Case | DFP |
| Collector Base Voltage (VCBO) | 16V |
| Collector Emitter Breakdown Voltage | 5.5V |
| Collector-emitter Voltage-Max | 5.5V |
| Continuous Collector Current | 30mA |
| Emitter Base Voltage (VEBO) | 2.5V |
| Gain | 21dB |
| Gain Bandwidth Product | 21GHz |
| hFE Min | 90 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 5.5V |
| Max Collector Current | 60mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 225mW |
| Mount | Surface Mount |
| Output Power | 225mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 21GHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP BFU660F,115 Datasheet
Download the complete datasheet for NXP BFU660F,115 to view detailed technical specifications.
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