NPN wideband silicon RF transistor in a DFP 4-pin package. Features a 18.5dB gain and 18GHz gain bandwidth product. Operates with a continuous collector current of 70mA and a maximum collector current of 100mA. Offers a maximum power dissipation of 230mW and a transition frequency of 18GHz. This surface mount component is RoHS compliant and lead-free, with an operating temperature range of -65°C to 150°C.
PackageDFP
MountingSurface Mount
PolarityNPN
Power230mW
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Technical Specifications
NXP BFU690F,115 technical specifications.
General
| Package/Case | DFP |
| Collector Base Voltage (VCBO) | 16V |
| Collector Emitter Breakdown Voltage | 5.5V |
| Collector-emitter Voltage-Max | 5.5V |
| Continuous Collector Current | 70mA |
| Emitter Base Voltage (VEBO) | 2.5V |
| Gain | 18.5dB |
| Gain Bandwidth Product | 18GHz |
| Height | 750um |
| hFE Min | 90 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 5.5V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 230mW |
| Mount | Surface Mount |
| Output Power | 230mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 18GHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP BFU690F,115 Datasheet
Download the complete datasheet for NXP BFU690F,115 to view detailed technical specifications.
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