RF Transistor, NPN, SiGe, Single Dual Emitter configuration. Features a maximum collector-emitter voltage of 2.8V and a maximum DC collector current of 0.04A. Offers 136mW maximum power dissipation and a minimum DC current gain of 300. Packaged in a 4-pin DFP (DFN) lead-frame SMT, measuring 2.2mm x 1.35mm x 0.75mm with a 1.3mm pin pitch. Operates from -65°C to 150°C.
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| Basic Package Type | Lead-Frame SMT |
| Package/Case | DFP |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 2.2(Max) |
| Package Width (mm) | 1.35(Max) |
| Package Height (mm) | 0.75(Max) |
| Seated Plane Height (mm) | 0.75(Max) |
| Pin Pitch (mm) | 1.3 |
| Mounting | Surface Mount |
| Material | SiGe |
| Type | NPN |
| Configuration | Single Dual Emitter |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 2.8V |
| Maximum Collector Base Voltage | 10V |
| Maximum Emitter Base Voltage | 0.55V |
| Maximum DC Collector Current | 0.04A |
| Maximum Power Dissipation | 136mW |
| Minimum DC Current Gain | 300@10mA@2V |
| Minimum DC Current Gain Range | 300 to 500 |
| Maximum Transition Frequency | 70(Typ)MHz |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Cage Code | H1R01 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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