High-frequency NPN RF bipolar junction transistor designed for surface mount applications. Features a 55 GHz transition frequency and 2.8V collector-emitter breakdown voltage. Offers a continuous collector current of 40mA and a maximum power dissipation of 136mW. Operates across a wide temperature range from -65°C to 150°C. Packaged in a 4-pin SO package on tape and reel, this RoHS compliant component is lead-free.
Frequency55GHz
PackageSO
MountingSurface Mount
PolarityNPN
Quick Jump:
Technical Specifications
NXP BFU725F/N1,115 technical specifications.
General
| Package/Case | SO |
| Collector Base Voltage (VCBO) | 10V |
| Collector Emitter Breakdown Voltage | 2.8V |
| Collector-emitter Voltage-Max | 2.8V |
| Continuous Collector Current | 40mA |
| Emitter Base Voltage (VEBO) | 550mV |
| Frequency | 55GHz |
| Gain | 24dB |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 2.8V |
| Max Collector Current | 40mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 136mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 55 GHz |
| Output Power | 136mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 136mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 55GHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP BFU725F/N1,115 Datasheet
Download the complete datasheet for NXP BFU725F/N1,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
