RF Transistor, NPN polarity, designed for high-frequency applications with a 55 GHz transition frequency. Features a 2.8V collector-emitter breakdown voltage and a maximum collector current of 30mA. This surface-mount component offers a minimum hFE of 205 and a gain of 12.5dB, with a maximum power dissipation of 197mW. Packaged in a 4-pin DFP (DFN) package, it operates from -65°C to 150°C and is RoHS compliant.
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NXP BFU730F,115 technical specifications.
| Package/Case | DFP |
| Collector Base Voltage (VCBO) | 10V |
| Collector Emitter Breakdown Voltage | 2.8V |
| Collector-emitter Voltage-Max | 2.8V |
| Contact Plating | Tin |
| Continuous Collector Current | 5mA |
| Emitter Base Voltage (VEBO) | 1V |
| Gain | 12.5dB |
| Height | 0.75mm |
| hFE Min | 205 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 2.8V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 197mW |
| Mount | Surface Mount |
| Operating Frequency | 55 GHz |
| Output Power | 197mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 55GHz |
| Width | 1.35mm |
| RoHS | Compliant |
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