RF Transistor, NPN bipolar junction transistor designed for high-frequency applications. Features a 2.8V collector-emitter voltage, 100mA continuous collector current, and 234mW maximum power dissipation. Operates at frequencies up to 110 GHz with a transition frequency of 25GHz. Packaged in a 4-pin DFP surface-mount case, supplied on tape and reel. Compliant with RoHS standards and lead-free.
Frequency110 GHz
PackageDFP
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BFU790F,115 technical specifications.
General
| Package/Case | DFP |
| Collector Base Voltage (VCBO) | 10V |
| Collector Emitter Breakdown Voltage | 2.8V |
| Collector-emitter Voltage-Max | 2.8V |
| Contact Plating | Tin |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 1V |
| Gain | 19.5dB |
| hFE Min | 235 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 2.8V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 234mW |
| Mount | Surface Mount |
| Operating Frequency | 110 GHz |
| Output Power | 234mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 25GHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP BFU790F,115 Datasheet
Download the complete datasheet for NXP BFU790F,115 to view detailed technical specifications.
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