N-channel RF MOSFET, 65V drain-source breakdown voltage, 2.2A continuous drain current, and 1.05 Ohm drain-source resistance. Features a 960MHz operating frequency with a 16.5dB gain, capable of 10W output power. Surface mountable in a 3-pin CDIP SMD package, this RoHS compliant component operates from -65°C to 200°C.
Frequency960MHz
PackageSMD/SMT
Voltage Rating65V
Current Rating2.2A
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Technical Specifications
NXP BLF1043,112 technical specifications.
General
Package/Case
SMD/SMT
Continuous Drain Current (ID)
2.2A
Current Rating
2.2A
Drain to Source Breakdown Voltage
65V
Drain to Source Resistance
1.05R
Drain to Source Voltage (Vdss)
65V
Frequency
960MHz
Gain
16.5dB
Gate to Source Voltage (Vgs)
15V
Height
2.95mm
Input Capacitance
11pF
Lead Free
Lead Free
Length
5.16mm
Max Frequency
1GHz
Min Frequency
800MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Mount
Surface Mount
Number of Elements
1
Output Power
10W
Package Quantity
20
Packaging
Tray
Polarity
N-CHANNEL
RoHS Compliant
Yes
Test Voltage
26V
Voltage Rating
65V
Width
4.14mm
Compliance
RoHS
Compliant
Datasheet
NXP BLF1043,112 Datasheet
Download the complete datasheet for NXP BLF1043,112 to view detailed technical specifications.
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