N-channel RF MOSFET, 65V drain-source breakdown voltage, 2.2A continuous drain current, and 1.05 Ohm drain-source resistance. Features a 960MHz operating frequency with a 16.5dB gain, capable of 10W output power. Surface mountable in a 3-pin CDIP SMD package, this RoHS compliant component operates from -65°C to 200°C.
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| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 2.2A |
| Current Rating | 2.2A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 1.05R |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 960MHz |
| Gain | 16.5dB |
| Gate to Source Voltage (Vgs) | 15V |
| Height | 2.95mm |
| Input Capacitance | 11pF |
| Lead Free | Lead Free |
| Length | 5.16mm |
| Max Frequency | 1GHz |
| Min Frequency | 800MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 10W |
| Package Quantity | 20 |
| Packaging | Tray |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 26V |
| Voltage Rating | 65V |
| Width | 4.14mm |
| RoHS | Compliant |
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