N-Channel RF MOSFET with 65V Drain-Source Breakdown Voltage and 6A Continuous Drain Current. Features 750mΩ Drain-Source On-Resistance and 30W Max Output Power. Operates at frequencies up to 28MHz with 20dB gain. Designed for surface mount applications with a 4-pin SOT-123A package, offering a wide operating temperature range from -65°C to 200°C. RoHS compliant and lead-free.
Frequency28MHz
Voltage Rating65V
Current Rating6A
MountingSurface Mount, Screw
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Technical Specifications
NXP BLF145,112 technical specifications.
General
| Continuous Drain Current (ID) | 6A |
| Current Rating | 6A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 65V |
| DS Breakdown Voltage-Min | 65V |
| Frequency | 28MHz |
| Gain | 20dB |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Frequency | 28MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 30W |
| Max Power Dissipation | 68W |
| Mount | Surface Mount, Screw |
| Number of Elements | 1 |
| Output Power | 30W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 68W |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF145,112 Datasheet
Download the complete datasheet for NXP BLF145,112 to view detailed technical specifications.
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