N-Channel RF MOSFET with 65V Drain-Source Breakdown Voltage and 6A Continuous Drain Current. Features 750mΩ Drain-Source On-Resistance and 30W Max Output Power. Operates at frequencies up to 28MHz with 20dB gain. Designed for surface mount applications with a 4-pin SOT-123A package, offering a wide operating temperature range from -65°C to 200°C. RoHS compliant and lead-free.
Frequency28MHz
Voltage Rating65V
Current Rating6A
MountingSurface Mount, Screw
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Technical Specifications
NXP BLF145,112 technical specifications.
General
Continuous Drain Current (ID)
6A
Current Rating
6A
Drain to Source Breakdown Voltage
65V
Drain to Source Resistance
750mR
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
28MHz
Gain
20dB
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Frequency
28MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
30W
Max Power Dissipation
68W
Mount
Surface Mount, Screw
Number of Elements
1
Output Power
30W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
68W
RoHS Compliant
Yes
Test Voltage
28V
Voltage Rating
65V
Compliance
RoHS
Compliant
Datasheet
NXP BLF145,112 Datasheet
Download the complete datasheet for NXP BLF145,112 to view detailed technical specifications.
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