The BLF177 is a 125V 16A RF transistor with a maximum power dissipation of 220W and a maximum operating temperature of 200°C. It is packaged in a CERAMIC PACKAGE-4. The device is RoHS compliant and lead free. The transistor has a drain to source breakdown voltage of 125V and a gain of 19dB. It is suitable for use in high-power applications.
Current Rating16A
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Technical Specifications
NXP BLF177 technical specifications.
General
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Drain to Source Breakdown Voltage | 125V |
| Drain to Source Voltage (Vdss) | 125V |
| Gain | 19dB |
| Lead Free | Lead Free |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 220W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 125V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF177 Datasheet
Download the complete datasheet for NXP BLF177 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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