N-channel RF transistor designed for high-power applications, featuring a 125V drain-to-source voltage and 16A continuous drain current. Operates efficiently at frequencies up to 108MHz, delivering 150W of output power with a typical gain of 19dB. Boasts a low drain-to-source resistance of 300mR and a maximum power dissipation of 220W. This lead-free, RoHS-compliant component is suitable for demanding environments with an operating temperature range of -65°C to 200°C.
Frequency108MHz
Voltage Rating125V
Current Rating16A
MountingScrew
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Technical Specifications
NXP BLF177,112 technical specifications.
General
Continuous Drain Current (ID)
16A
Current Rating
16A
Drain to Source Resistance
300mR
Drain to Source Voltage (Vdss)
125V
DS Breakdown Voltage-Min
50V
Frequency
108MHz
Gain
19dB
Gate to Source Voltage (Vgs)
20V
Height
7.27mm
Input Capacitance
480pF
Lead Free
Lead Free
Length
24.9mm
Max Frequency
108MHz
Min Frequency
28MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
150W
Max Power Dissipation
220W
Mount
Screw
Number of Elements
1
Operating Frequency
108 MHz
Output Power
150W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
RoHS Compliant
Yes
Test Voltage
50V
Voltage Rating
125V
Width
12.86mm
Compliance
RoHS
Compliant
Datasheet
NXP BLF177,112 Datasheet
Download the complete datasheet for NXP BLF177,112 to view detailed technical specifications.
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