N-channel RF transistor designed for high-power applications, featuring a 125V drain-to-source voltage and 16A continuous drain current. Operates efficiently at frequencies up to 108MHz, delivering 150W of output power with a typical gain of 19dB. Boasts a low drain-to-source resistance of 300mR and a maximum power dissipation of 220W. This lead-free, RoHS-compliant component is suitable for demanding environments with an operating temperature range of -65°C to 200°C.
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NXP BLF177,112 technical specifications.
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 125V |
| DS Breakdown Voltage-Min | 50V |
| Frequency | 108MHz |
| Gain | 19dB |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 7.27mm |
| Input Capacitance | 480pF |
| Lead Free | Lead Free |
| Length | 24.9mm |
| Max Frequency | 108MHz |
| Min Frequency | 28MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 150W |
| Max Power Dissipation | 220W |
| Mount | Screw |
| Number of Elements | 1 |
| Operating Frequency | 108 MHz |
| Output Power | 150W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 50V |
| Voltage Rating | 125V |
| Width | 12.86mm |
| RoHS | Compliant |
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