High-power LDMOS transistor designed for RF power applications. Features a 135V drain-to-source voltage and 600MHz operating frequency, delivering 1.4kW output power. Offers a low 80mΩ drain-to-source resistance and 24.4dB gain. This lead-free, RoHS compliant component is supplied in tray packaging.
Frequency600MHz
Voltage Rating50V
Current Rating2.8uA
Power1.4kW
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Technical Specifications
NXP BLF188XRU technical specifications.
General
| Continuous Drain Current (ID) | 40mA |
| Current Rating | 2.8uA |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 135V |
| Frequency | 600MHz |
| Gain | 24.4dB |
| Gate to Source Voltage (Vgs) | 11V |
| Lead Free | Lead Free |
| Operating Frequency | 600 MHz |
| Output Power | 1.4kW |
| Package Quantity | 20 |
| Packaging | Tray |
| RoHS Compliant | Yes |
| Test Voltage | 50V |
| Voltage Rating | 50V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF188XRU Datasheet
Download the complete datasheet for NXP BLF188XRU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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