N-channel VDMOS power transistor for high and very-high frequency applications. Features a 65V drain-to-source voltage rating and a continuous drain current of 1A. Delivers 5W maximum output power at 175MHz, with a typical gain of 16dB. Designed for surface mount with a 4-SOT-123A package. Operates across a wide temperature range from -65°C to 200°C.
Frequency175MHz
Voltage Rating65V
Current Rating1A
MountingSurface Mount, Screw
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Technical Specifications
NXP BLF242,112 technical specifications.
General
| Continuous Drain Current (ID) | 1A |
| Current Rating | 1A |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 65V |
| DS Breakdown Voltage-Min | 65V |
| Frequency | 175MHz |
| Gain | 16dB |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 7.47mm |
| Input Capacitance | 13pF |
| Lead Free | Lead Free |
| Length | 24.87mm |
| Max Frequency | 175MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 5W |
| Max Power Dissipation | 16W |
| Mount | Surface Mount, Screw |
| Number of Elements | 1 |
| Operating Frequency | 175 MHz |
| Output Power | 5W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| Width | 9.73mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF242,112 Datasheet
Download the complete datasheet for NXP BLF242,112 to view detailed technical specifications.
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