N-channel VDMOS power transistor for high and very-high frequency applications. Features a 65V drain-to-source voltage rating and a continuous drain current of 1A. Delivers 5W maximum output power at 175MHz, with a typical gain of 16dB. Designed for surface mount with a 4-SOT-123A package. Operates across a wide temperature range from -65°C to 200°C.
Frequency175MHz
Voltage Rating65V
Current Rating1A
MountingSurface Mount, Screw
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Technical Specifications
NXP BLF242,112 technical specifications.
General
Continuous Drain Current (ID)
1A
Current Rating
1A
Drain to Source Resistance
5R
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
175MHz
Gain
16dB
Gate to Source Voltage (Vgs)
20V
Height
7.47mm
Input Capacitance
13pF
Lead Free
Lead Free
Length
24.87mm
Max Frequency
175MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
5W
Max Power Dissipation
16W
Mount
Surface Mount, Screw
Number of Elements
1
Operating Frequency
175 MHz
Output Power
5W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
RoHS Compliant
Yes
Test Voltage
28V
Voltage Rating
65V
Width
9.73mm
Compliance
RoHS
Compliant
Datasheet
NXP BLF242,112 Datasheet
Download the complete datasheet for NXP BLF242,112 to view detailed technical specifications.
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