N-channel RF MOSFET, 65V drain-source voltage, 3A continuous drain current, 1.5 Ohm drain-source resistance, and 175MHz operating frequency. Features 15W output power, 38W max power dissipation, and 17dB gain. Designed for surface mount applications with a 4-pin SOT-123A package, operating from -65°C to 200°C. RoHS compliant and lead-free.
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NXP BLF244,112 technical specifications.
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 65V |
| DS Breakdown Voltage-Min | 65V |
| Frequency | 175MHz |
| Gain | 17dB |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 7.47mm |
| Input Capacitance | 60pF |
| Lead Free | Lead Free |
| Length | 24.87mm |
| Max Frequency | 175MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 15W |
| Max Power Dissipation | 38W |
| Mount | Surface Mount, Screw |
| Number of Elements | 1 |
| Operating Frequency | 175 MHz |
| Output Power | 15W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| Width | 9.73mm |
| RoHS | Compliant |
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