N-channel RF MOSFET, 65V drain-source voltage, 3A continuous drain current, 1.5 Ohm drain-source resistance, and 175MHz operating frequency. Features 15W output power, 38W max power dissipation, and 17dB gain. Designed for surface mount applications with a 4-pin SOT-123A package, operating from -65°C to 200°C. RoHS compliant and lead-free.
Frequency175MHz
Voltage Rating65V
Current Rating3A
MountingSurface Mount, Screw
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Technical Specifications
NXP BLF244,112 technical specifications.
General
Continuous Drain Current (ID)
3A
Current Rating
3A
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
175MHz
Gain
17dB
Gate to Source Voltage (Vgs)
20V
Height
7.47mm
Input Capacitance
60pF
Lead Free
Lead Free
Length
24.87mm
Max Frequency
175MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
15W
Max Power Dissipation
38W
Mount
Surface Mount, Screw
Number of Elements
1
Operating Frequency
175 MHz
Output Power
15W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
RoHS Compliant
Yes
Test Voltage
28V
Voltage Rating
65V
Width
9.73mm
Compliance
RoHS
Compliant
Datasheet
NXP BLF244,112 Datasheet
Download the complete datasheet for NXP BLF244,112 to view detailed technical specifications.
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