RF Power MOSFET, N-Channel, VHF Band, SOT-123A ceramic package. Features 65V drain-to-source breakdown voltage, 6A continuous drain current, and 30W maximum output power. Operates with a nominal Vgs of 4.5V, offering 15.5dB power gain and a 2dB noise figure. Maximum operating temperature reaches 200°C, with a minimum of -65°C. RoHS compliant and lead-free.
Frequency175MHz
PackageSOT-123
Current Rating6A
MountingScrew
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Technical Specifications
NXP BLF245 technical specifications.
General
Package/Case
SOT-123
Continuous Drain Current (ID)
6A
Current Rating
6A
Drain to Source Breakdown Voltage
65V
Drain to Source Voltage (Vdss)
65V
Dual Supply Voltage
65V
Gain
13dB
Lead Free
Lead Free
Max Frequency
175MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
30W
Max Power Dissipation
68W
Mount
Screw
Noise Figure
2dB
Nominal Vgs
4.5V
Number of Elements
1
Output Power
30W
Packaging
Bulk
Power Dissipation
68W
Power Gain
15.5dB
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
65V
Compliance
RoHS
Compliant
Datasheet
NXP BLF245 Datasheet
Download the complete datasheet for NXP BLF245 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.