RF Power MOSFET, N-Channel, VHF Band, SOT-123A ceramic package. Features 65V drain-to-source breakdown voltage, 6A continuous drain current, and 30W maximum output power. Operates with a nominal Vgs of 4.5V, offering 15.5dB power gain and a 2dB noise figure. Maximum operating temperature reaches 200°C, with a minimum of -65°C. RoHS compliant and lead-free.
Frequency175MHz
PackageSOT-123
Current Rating6A
MountingScrew
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Technical Specifications
NXP BLF245 technical specifications.
General
| Package/Case | SOT-123 |
| Continuous Drain Current (ID) | 6A |
| Current Rating | 6A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| Dual Supply Voltage | 65V |
| Gain | 13dB |
| Lead Free | Lead Free |
| Max Frequency | 175MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 30W |
| Max Power Dissipation | 68W |
| Mount | Screw |
| Noise Figure | 2dB |
| Nominal Vgs | 4.5V |
| Number of Elements | 1 |
| Output Power | 30W |
| Packaging | Bulk |
| Power Dissipation | 68W |
| Power Gain | 15.5dB |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 65V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF245 Datasheet
Download the complete datasheet for NXP BLF245 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.