N-channel RF power transistor designed for high-frequency applications. Features a continuous drain current of 4.5A, drain-to-source voltage of 65V, and a maximum operating frequency of 175MHz. Delivers 30W of output power with a gain of 18dB. Mounting is via screw, and it operates within a temperature range of -65°C to 200°C.
Frequency175MHz
Voltage Rating65V
Current Rating4.5A
MountingScrew
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Technical Specifications
NXP BLF245B,112 technical specifications.
General
Continuous Drain Current (ID)
4.5A
Current Rating
4.5A
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
175MHz
Gain
18dB
Gate to Source Voltage (Vgs)
20V
Height
6.84mm
Input Capacitance
60pF
Lead Free
Lead Free
Length
24.9mm
Max Frequency
175MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
30W
Max Power Dissipation
75W
Mount
Screw
Number of Elements
2
Operating Frequency
175 MHz
Output Power
30W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
RoHS Compliant
No
Test Voltage
28V
Voltage Rating
65V
Width
5.97mm
Compliance
RoHS
Not Compliant
Datasheet
NXP BLF245B,112 Datasheet
Download the complete datasheet for NXP BLF245B,112 to view detailed technical specifications.
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