N-channel RF power transistor designed for high-frequency applications. Features a continuous drain current of 4.5A, drain-to-source voltage of 65V, and a maximum operating frequency of 175MHz. Delivers 30W of output power with a gain of 18dB. Mounting is via screw, and it operates within a temperature range of -65°C to 200°C.
Frequency175MHz
Voltage Rating65V
Current Rating4.5A
MountingScrew
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Technical Specifications
NXP BLF245B,112 technical specifications.
General
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | 4.5A |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 65V |
| DS Breakdown Voltage-Min | 65V |
| Frequency | 175MHz |
| Gain | 18dB |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.84mm |
| Input Capacitance | 60pF |
| Lead Free | Lead Free |
| Length | 24.9mm |
| Max Frequency | 175MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 30W |
| Max Power Dissipation | 75W |
| Mount | Screw |
| Number of Elements | 2 |
| Operating Frequency | 175 MHz |
| Output Power | 30W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | No |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| Width | 5.97mm |
Compliance
| RoHS | Not Compliant |
Datasheet
NXP BLF245B,112 Datasheet
Download the complete datasheet for NXP BLF245B,112 to view detailed technical specifications.
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