N-channel RF power MOSFET transistor designed for VHF applications. Features a continuous drain current of 13A, drain-to-source breakdown voltage of 65V, and a maximum output power of 80W. Operates at frequencies up to 108MHz with a gain of 16dB. Offers a wide operating temperature range from -65°C to 150°C and a maximum power dissipation of 130W. Mounts via screw terminal and is packaged in rail/tube format.
Frequency108MHz
Voltage Rating65V
Current Rating13A
MountingScrew
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Technical Specifications
NXP BLF246,112 technical specifications.
General
| Continuous Drain Current (ID) | 13A |
| Current Rating | 13A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| DS Breakdown Voltage-Min | 65V |
| Frequency | 108MHz |
| Gain | 16dB |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Frequency | 108MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 80W |
| Max Power Dissipation | 130W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 80W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 130W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Test Voltage | 28V |
| Voltage Rating | 65V |
Compliance
| RoHS | Not CompliantNo |
Datasheet
NXP BLF246,112 Datasheet
Download the complete datasheet for NXP BLF246,112 to view detailed technical specifications.
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