N-channel RF power MOSFET transistor designed for VHF applications. Features a continuous drain current of 13A, drain-to-source breakdown voltage of 65V, and a maximum output power of 80W. Operates at frequencies up to 108MHz with a gain of 16dB. Offers a wide operating temperature range from -65°C to 150°C and a maximum power dissipation of 130W. Mounts via screw terminal and is packaged in rail/tube format.
Frequency108MHz
Voltage Rating65V
Current Rating13A
MountingScrew
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Technical Specifications
NXP BLF246,112 technical specifications.
General
Continuous Drain Current (ID)
13A
Current Rating
13A
Drain to Source Breakdown Voltage
65V
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
108MHz
Gain
16dB
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Frequency
108MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Output Power
80W
Max Power Dissipation
130W
Mount
Screw
Number of Elements
1
Output Power
80W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
130W
Radiation Hardening
No
RoHS Compliant
No
Test Voltage
28V
Voltage Rating
65V
Compliance
RoHS
Not CompliantNo
Datasheet
NXP BLF246,112 Datasheet
Download the complete datasheet for NXP BLF246,112 to view detailed technical specifications.
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