N-channel RF MOSFET with 65V drain-source breakdown voltage and 8A continuous drain current. Features 175MHz maximum frequency, 19dB gain, and 60W output power. Operates across a wide temperature range from -65°C to 200°C. Designed for screw mounting with a 750mΩ drain-source resistance.
Frequency175MHz
Voltage Rating65V
Current Rating8A
MountingScrew
Quick Jump:
Technical Specifications
NXP BLF246B,112 technical specifications.
General
Continuous Drain Current (ID)
8A
Current Rating
8A
Drain to Source Breakdown Voltage
65V
Drain to Source Resistance
750mR
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
175MHz
Gain
19dB
Gate to Source Voltage (Vgs)
20V
Height
7.27mm
Input Capacitance
125pF
Lead Free
Lead Free
Length
24.97mm
Max Frequency
175MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
60W
Max Power Dissipation
130W
Mount
Screw
Number of Elements
2
Output Power
60W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
130W
RoHS Compliant
No
Test Voltage
28V
Voltage Rating
65V
Width
16.81mm
Compliance
RoHS
Not Compliant
Datasheet
NXP BLF246B,112 Datasheet
Download the complete datasheet for NXP BLF246B,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
