N-channel RF MOSFET with 65V drain-source breakdown voltage and 8A continuous drain current. Features 175MHz maximum frequency, 19dB gain, and 60W output power. Operates across a wide temperature range from -65°C to 200°C. Designed for screw mounting with a 750mΩ drain-source resistance.
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NXP BLF246B,112 technical specifications.
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 65V |
| DS Breakdown Voltage-Min | 65V |
| Frequency | 175MHz |
| Gain | 19dB |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 7.27mm |
| Input Capacitance | 125pF |
| Lead Free | Lead Free |
| Length | 24.97mm |
| Max Frequency | 175MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 60W |
| Max Power Dissipation | 130W |
| Mount | Screw |
| Number of Elements | 2 |
| Output Power | 60W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 130W |
| RoHS Compliant | No |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| Width | 16.81mm |
| RoHS | Not Compliant |
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