The BLF278/01,112 is a high-power N-Channel MOSFET with a maximum drain-to-source breakdown voltage of 125V and a maximum continuous drain current of 18A. It can handle a maximum power dissipation of 500W and operates over a temperature range of -65°C to 200°C. The device is available in a screw mount package and is suitable for high-frequency applications, with a maximum frequency of 225MHz and a gain of 22dB.
Frequency108MHz
Voltage Rating125V
Current Rating18A
MountingScrew
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Technical Specifications
NXP BLF278/01,112 technical specifications.
General
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Breakdown Voltage | 125V |
| Drain to Source Voltage (Vdss) | 125V |
| Frequency | 108MHz |
| Gain | 22dB |
| Gate to Source Voltage (Vgs) | 20V |
| Max Frequency | 225MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500W |
| Mount | Screw |
| Number of Elements | 2 |
| Output Power | 300W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Radiation Hardening | No |
| Test Voltage | 50V |
| Voltage Rating | 125V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF278/01,112 Datasheet
Download the complete datasheet for NXP BLF278/01,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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