N-channel RF transistor with 125V drain-source voltage and 18A continuous drain current. Features 300W maximum output power at 225 MHz, 22dB power gain, and 500W power dissipation. Operates across a wide temperature range from -65°C to 200°C. Screw mount package with lead-free and RoHS compliant construction.
Frequency108MHz
Voltage Rating125V
Current Rating18A
MountingScrew
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Technical Specifications
NXP BLF278,112 technical specifications.
General
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 125V |
| DS Breakdown Voltage-Min | 125V |
| Frequency | 108MHz |
| Gain | 22dB |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.77mm |
| Input Capacitance | 480pF |
| Lead Free | Lead Free |
| Length | 21.98mm |
| Max Frequency | 225MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 300W |
| Max Power Dissipation | 500W |
| Mount | Screw |
| Number of Elements | 2 |
| Operating Frequency | 225 MHz |
| Output Power | 300W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Power Gain | 22dB |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 50V |
| Voltage Rating | 125V |
| Width | 10.29mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF278,112 Datasheet
Download the complete datasheet for NXP BLF278,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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