N-channel RF transistor with 125V drain-source voltage and 18A continuous drain current. Features 300W maximum output power at 225 MHz, 22dB power gain, and 500W power dissipation. Operates across a wide temperature range from -65°C to 200°C. Screw mount package with lead-free and RoHS compliant construction.
Frequency108MHz
Voltage Rating125V
Current Rating18A
MountingScrew
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Technical Specifications
NXP BLF278,112 technical specifications.
General
Continuous Drain Current (ID)
18A
Current Rating
18A
Drain to Source Resistance
300mR
Drain to Source Voltage (Vdss)
125V
DS Breakdown Voltage-Min
125V
Frequency
108MHz
Gain
22dB
Gate to Source Voltage (Vgs)
20V
Height
5.77mm
Input Capacitance
480pF
Lead Free
Lead Free
Length
21.98mm
Max Frequency
225MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
300W
Max Power Dissipation
500W
Mount
Screw
Number of Elements
2
Operating Frequency
225 MHz
Output Power
300W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
500W
Power Gain
22dB
Radiation Hardening
No
RoHS Compliant
Yes
Test Voltage
50V
Voltage Rating
125V
Width
10.29mm
Compliance
RoHS
Compliant
Datasheet
NXP BLF278,112 Datasheet
Download the complete datasheet for NXP BLF278,112 to view detailed technical specifications.
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