The BLF369,112 is a 65V N-CHANNEL RF transistor with a maximum frequency of 500MHz and a maximum operating temperature of 200°C. It is packaged in a SOT package and is lead free. The transistor has a drain to source breakdown voltage of 65V and a drain to source resistance of 40mR. It is RoHS compliant and has a gain of 17dB.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NXP BLF369,112 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 65V |
| DS Breakdown Voltage-Min | 65V |
| Frequency | 225MHz |
| Gain | 17dB |
| Gate to Source Voltage (Vgs) | 13V |
| Lead Free | Lead Free |
| Max Frequency | 500MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 500W |
| Mount | Screw |
| Number of Elements | 2 |
| Output Power | 500W |
| Package Quantity | 15 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 32V |
| Voltage Rating | 65V |
| RoHS | Compliant |
Download the complete datasheet for NXP BLF369,112 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
