N-Channel RF MOSFET, 40V Drain-Source Breakdown Voltage, 1.5A Continuous Drain Current. Features 500MHz maximum frequency, 11.5dB gain, and 4W maximum output power. Operates from -65°C to 150°C with 8.3W maximum power dissipation. Surface mountable in an 8-pin CDIP package, supplied on tape and reel. Lead-free and RoHS compliant.
Frequency500MHz
PackageSMD/SMT
Voltage Rating40V
Current Rating1.5A
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Technical Specifications
NXP BLF404,115 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 1.5A |
| Current Rating | 1.5A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Frequency | 500MHz |
| Gain | 11.5dB |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Frequency | 500MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 4W |
| Max Power Dissipation | 8.3W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Output Power | 4W |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 8.3W |
| RoHS Compliant | Yes |
| Test Voltage | 12.5V |
| Voltage Rating | 40V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF404,115 Datasheet
Download the complete datasheet for NXP BLF404,115 to view detailed technical specifications.
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