N-Channel RF MOSFET, 40V Drain-Source Breakdown Voltage, 1.5A Continuous Drain Current. Features 500MHz maximum frequency, 11.5dB gain, and 4W maximum output power. Operates from -65°C to 150°C with 8.3W maximum power dissipation. Surface mountable in an 8-pin CDIP package, supplied on tape and reel. Lead-free and RoHS compliant.
Frequency500MHz
PackageSMD/SMT
Voltage Rating40V
Current Rating1.5A
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Technical Specifications
NXP BLF404,115 technical specifications.
General
Package/Case
SMD/SMT
Continuous Drain Current (ID)
1.5A
Current Rating
1.5A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Frequency
500MHz
Gain
11.5dB
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Frequency
500MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Output Power
4W
Max Power Dissipation
8.3W
Mount
Surface Mount
Number of Elements
2
Output Power
4W
Package Quantity
500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
8.3W
RoHS Compliant
Yes
Test Voltage
12.5V
Voltage Rating
40V
Compliance
RoHS
Compliant
Datasheet
NXP BLF404,115 Datasheet
Download the complete datasheet for NXP BLF404,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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