RF MOSFET transistor, N-channel enhancement mode, single element configuration. Features 65V drain-source voltage, 15A continuous drain current, and operates from 2000MHz to 2200MHz. Delivers 13.5dB typical power gain and 33W typical output power, suitable for 2-Carrier W-CDMA operation. Surface mountable in a 3-pin SOT-502B ceramic package with flat lead shape, measuring 20.7mm x 9.91mm x 4.72mm. Operating temperature range from -65°C to 200°C.
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| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-502B |
| Lead Shape | Flat |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 20.7(Max) |
| Package Width (mm) | 9.91(Max) |
| Package Height (mm) | 4.72(Max) |
| Seated Plane Height (mm) | 4.72(Max) |
| Package Material | Ceramic |
| Mounting | Surface Mount |
| Channel Type | N |
| Configuration | Single |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 65V |
| Maximum Continuous Drain Current | 15A |
| Minimum Frequency | 2000MHz |
| Maximum Frequency | 2200MHz |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Mode of Operation | 2-Carrier W-CDMA |
| Typical Power Gain | 13.5dB |
| Output Power | 33(Typ)W |
| Cage Code | H1R01 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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