RF MOSFET transistor, N-channel, enhancement mode, single element configuration. Features 65V maximum drain-source voltage and 12A maximum continuous drain current. Operates within a frequency range of 2000MHz to 2200MHz, offering 13.5dB typical power gain and 25W typical output power. Housed in a 3-pin SOT-502B ceramic package with flat lead shape, suitable for surface mounting. Operating temperature range from -65°C to 200°C.
PackageSOT-502B
MountingSurface Mount
Power25(Typ)W
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Technical Specifications
NXP BLF4G22S-100,112 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-502B |
| Lead Shape | Flat |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 20.7(Max) |
| Package Width (mm) | 9.91(Max) |
| Package Height (mm) | 4.72(Max) |
| Seated Plane Height (mm) | 4.72(Max) |
| Package Material | Ceramic |
| Mounting | Surface Mount |
| Channel Type | N |
| Configuration | Single |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 65V |
| Maximum Continuous Drain Current | 12A |
| Minimum Frequency | 2000MHz |
| Maximum Frequency | 2200MHz |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Mode of Operation | 2-Carrier W-CDMA |
| Typical Power Gain | 13.5dB |
| Output Power | 25(Typ)W |
Compliance
| Cage Code | H1R01 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
NXP BLF4G22S-100,112 Datasheet
Download the complete datasheet for NXP BLF4G22S-100,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.