N-channel RF MOSFET transistor designed for UHF applications, delivering 5W maximum output power at 500MHz. Features a continuous drain current of 1.5A and a drain-to-source breakdown voltage of 65V. Operates across a wide temperature range from -65°C to 200°C, with a maximum power dissipation of 20W. This component is lead-free and utilizes a screw mount for secure installation.
Frequency500MHz
Voltage Rating65V
Current Rating1.5A
MountingScrew
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Technical Specifications
NXP BLF542112 technical specifications.
General
| Continuous Drain Current (ID) | 1.5A |
| Current Rating | 1.5A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 65V |
| DS Breakdown Voltage-Min | 65V |
| Frequency | 500MHz |
| Gain | 16.5dB |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.81mm |
| Input Capacitance | 14pF |
| Lead Free | Lead Free |
| Length | 24.9mm |
| Max Frequency | 500MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 5W |
| Max Power Dissipation | 20W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 5W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 20W |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| Width | 5.97mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF542112 Datasheet
Download the complete datasheet for NXP BLF542112 to view detailed technical specifications.
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