N-channel RF MOSFET with 65V drain-source breakdown voltage and 9A continuous drain current. Features 80W maximum output power and 145W power dissipation, operating up to 500MHz. This component offers a 13dB gain and 60pF input capacitance, with a low drain-source on-resistance of 600mR. Designed for screw mounting, it operates across a wide temperature range from -65°C to 200°C.
Frequency500MHz
Voltage Rating65V
Current Rating9A
MountingScrew
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Technical Specifications
NXP BLF546,112 technical specifications.
General
Continuous Drain Current (ID)
9A
Current Rating
9A
Drain to Source Breakdown Voltage
65V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
500MHz
Gain
13dB
Gate to Source Voltage (Vgs)
20V
Height
4.91mm
Input Capacitance
60pF
Lead Free
Lead Free
Length
24.9mm
Max Frequency
500MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
80W
Max Power Dissipation
145W
Mount
Screw
Number of Elements
2
Output Power
80W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
145W
RoHS Compliant
No
Test Voltage
28V
Voltage Rating
65V
Width
6.61mm
Compliance
RoHS
Not Compliant
Datasheet
NXP BLF546,112 Datasheet
Download the complete datasheet for NXP BLF546,112 to view detailed technical specifications.
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