N-channel RF MOSFET with 65V drain-source breakdown voltage and 9A continuous drain current. Features 80W maximum output power and 145W power dissipation, operating up to 500MHz. This component offers a 13dB gain and 60pF input capacitance, with a low drain-source on-resistance of 600mR. Designed for screw mounting, it operates across a wide temperature range from -65°C to 200°C.
Frequency500MHz
Voltage Rating65V
Current Rating9A
MountingScrew
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Technical Specifications
NXP BLF546,112 technical specifications.
General
| Continuous Drain Current (ID) | 9A |
| Current Rating | 9A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 65V |
| DS Breakdown Voltage-Min | 65V |
| Frequency | 500MHz |
| Gain | 13dB |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.91mm |
| Input Capacitance | 60pF |
| Lead Free | Lead Free |
| Length | 24.9mm |
| Max Frequency | 500MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 80W |
| Max Power Dissipation | 145W |
| Mount | Screw |
| Number of Elements | 2 |
| Output Power | 80W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 145W |
| RoHS Compliant | No |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| Width | 6.61mm |
Compliance
| RoHS | Not Compliant |
Datasheet
NXP BLF546,112 Datasheet
Download the complete datasheet for NXP BLF546,112 to view detailed technical specifications.
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