N-channel MOSFET transistor for RF applications, featuring a 110V drain-to-source voltage and 3.6A continuous drain current. This component operates at a maximum frequency of 225 MHz, delivering 20W of output power. It offers a minimum drain-to-source breakdown voltage of 50V and a typical drain-to-source resistance of 1.34 Ohms. Designed for screw mounting, this RoHS compliant transistor operates across a temperature range of -65°C to 150°C.
Frequency225MHz
MountingScrew
PolarityN-CHANNEL
Power20W
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Technical Specifications
NXP BLF571,112 technical specifications.
General
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Resistance | 1.34R |
| Drain to Source Voltage (Vdss) | 110V |
| DS Breakdown Voltage-Min | 50V |
| Gain | 27.5dB |
| Gate to Source Voltage (Vgs) | 11V |
| Lead Free | Lead Free |
| Max Frequency | 225MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 20W |
| Max Power Dissipation | 20W |
| Mount | Screw |
| Number of Elements | 1 |
| Operating Frequency | 225 MHz |
| Output Power | 20W |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF571,112 Datasheet
Download the complete datasheet for NXP BLF571,112 to view detailed technical specifications.
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