This N-Channel MOSFET has a drain to source breakdown voltage of 65V and a continuous drain current of 29A. It features a drain to source resistance of 160mR and a maximum operating temperature of 225°C. The device is surface mount and RoHS compliant.
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NXP BLF6G22LS-100,112 technical specifications.
| Continuous Drain Current (ID) | 29A |
| Current Rating | 29A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 2.17GHz |
| Gain | 18.2dB |
| Gate to Source Voltage (Vgs) | 13V |
| Max Frequency | 2.17GHz |
| Min Frequency | 2.11GHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 25W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 25W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| RoHS | Compliant |
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