RF MOSFET N-Channel transistor, single enhancement mode, 65V drain-source voltage, 18A continuous drain current. Operates from 2500MHz to 2700MHz with 17dB typical power gain and 75W typical output power. Features a 3-pin SOT-502B ceramic package with flat lead shape, suitable for surface mounting. Operating temperature range from -65°C to 200°C.
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NXP BLF6G27LS-75,112 technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-502B |
| Lead Shape | Flat |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 20.7(Max) |
| Package Width (mm) | 9.91(Max) |
| Package Height (mm) | 4.72(Max) |
| Seated Plane Height (mm) | 4.72(Max) |
| Package Material | Ceramic |
| Mounting | Surface Mount |
| Channel Type | N |
| Configuration | Single |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 65V |
| Maximum Continuous Drain Current | 18A |
| Minimum Frequency | 2500MHz |
| Maximum Frequency | 2700MHz |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Mode of Operation | 1-Carrier N-CDMA |
| Typical Power Gain | 17dB |
| Output Power | 75(Typ)W |
| Cage Code | H1R01 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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