N-channel RF MOSFET with 65V drain-source voltage and 18A continuous drain current. Features 160mΩ drain-source resistance and 150W maximum output power at 860MHz. Operates across a wide temperature range from -65°C to 200°C. This component is lead-free and RoHS compliant, designed for screw mounting.
Frequency860MHz
Voltage Rating65V
Current Rating18A
MountingScrew
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Technical Specifications
NXP BLF861A,112 technical specifications.
General
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 65V |
| DS Breakdown Voltage-Min | 65V |
| Frequency | 860MHz |
| Gain | 14.5dB |
| Gate to Source Voltage (Vgs) | 15V |
| Height | 5.77mm |
| Lead Free | Lead Free |
| Length | 34.16mm |
| Max Frequency | 860MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 150W |
| Max Power Dissipation | 318W |
| Mount | Screw |
| Number of Elements | 1 |
| Operating Frequency | 860 MHz |
| Output Power | 150W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 32V |
| Voltage Rating | 65V |
| Width | 10.31mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF861A,112 Datasheet
Download the complete datasheet for NXP BLF861A,112 to view detailed technical specifications.
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