N-channel RF MOSFET with 65V drain-source voltage and 18A continuous drain current. Features 160mΩ drain-source resistance and 150W maximum output power at 860MHz. Operates across a wide temperature range from -65°C to 200°C. This component is lead-free and RoHS compliant, designed for screw mounting.
Frequency860MHz
Voltage Rating65V
Current Rating18A
MountingScrew
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Technical Specifications
NXP BLF861A,112 technical specifications.
General
Continuous Drain Current (ID)
18A
Current Rating
18A
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
860MHz
Gain
14.5dB
Gate to Source Voltage (Vgs)
15V
Height
5.77mm
Lead Free
Lead Free
Length
34.16mm
Max Frequency
860MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
150W
Max Power Dissipation
318W
Mount
Screw
Number of Elements
1
Operating Frequency
860 MHz
Output Power
150W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
RoHS Compliant
Yes
Test Voltage
32V
Voltage Rating
65V
Width
10.31mm
Compliance
RoHS
Compliant
Datasheet
NXP BLF861A,112 Datasheet
Download the complete datasheet for NXP BLF861A,112 to view detailed technical specifications.
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