N-Channel MOSFET transistor designed for RF applications, featuring a 89V drain-to-source breakdown voltage and a continuous drain current of 20A. Operates at frequencies up to 860MHz with a maximum output power of 100W and a gain of 19dB. Offers a low drain-to-source resistance of 210mR and a maximum power dissipation of 24W. This lead-free, RoHS compliant component is suitable for a wide operating temperature range from -65°C to 150°C and utilizes screw mounting.
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| Continuous Drain Current (ID) | 20A |
| Current Rating | 1.4uA |
| Drain to Source Breakdown Voltage | 89V |
| Drain to Source Resistance | 210mR |
| Drain to Source Voltage (Vdss) | 89V |
| DS Breakdown Voltage-Min | 40V |
| Frequency | 860MHz |
| Gain | 19dB |
| Gate to Source Voltage (Vgs) | 13V |
| Lead Free | Lead Free |
| Max Frequency | 860MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 100W |
| Max Power Dissipation | 24W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 100W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 24W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 40V |
| Voltage Rating | 89V |
| RoHS | Compliant |
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