N-Channel MOSFET transistor designed for RF applications, featuring a 89V drain-to-source breakdown voltage and a continuous drain current of 20A. Operates at frequencies up to 860MHz with a maximum output power of 100W and a gain of 19dB. Offers a low drain-to-source resistance of 210mR and a maximum power dissipation of 24W. This lead-free, RoHS compliant component is suitable for a wide operating temperature range from -65°C to 150°C and utilizes screw mounting.
Frequency860MHz
Voltage Rating89V
Current Rating1.4uA
MountingScrew
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Technical Specifications
NXP BLF871,112 technical specifications.
General
Continuous Drain Current (ID)
20A
Current Rating
1.4uA
Drain to Source Breakdown Voltage
89V
Drain to Source Resistance
210mR
Drain to Source Voltage (Vdss)
89V
DS Breakdown Voltage-Min
40V
Frequency
860MHz
Gain
19dB
Gate to Source Voltage (Vgs)
13V
Lead Free
Lead Free
Max Frequency
860MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Output Power
100W
Max Power Dissipation
24W
Mount
Screw
Number of Elements
1
Output Power
100W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
24W
Radiation Hardening
No
RoHS Compliant
Yes
Test Voltage
40V
Voltage Rating
89V
Compliance
RoHS
Compliant
Datasheet
NXP BLF871,112 Datasheet
Download the complete datasheet for NXP BLF871,112 to view detailed technical specifications.
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