The BLF878 is a N-CHANNEL LDMOS transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It has a maximum power dissipation of 300W and is RoHS compliant. The transistor features a drain to source breakdown voltage of 89V and a drain to source resistance of 110mR. It is available in a lead free package and is suitable for use in high power applications.
PolarityN-CHANNEL
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Technical Specifications
NXP BLF878 technical specifications.
General
| Continuous Drain Current (ID) | 7.6A |
| Drain to Source Breakdown Voltage | 89V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 89V |
| Gate to Source Voltage (Vgs) | 13V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Technology | LDMOS |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF878 Datasheet
Download the complete datasheet for NXP BLF878 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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