N-channel MOSFET with 104V Drain to Source Breakdown Voltage and 21A Continuous Drain Current. Features 1GHz operating frequency, 21dB gain, and 33W output power. Designed for high-frequency applications with a maximum operating temperature of 150°C. This RoHS compliant component is lead-free and supplied in rail/tube packaging.
Frequency1GHz
PolarityN-CHANNEL
Power33W
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Technical Specifications
NXP BLF881,112 technical specifications.
General
Continuous Drain Current (ID)
21A
Drain to Source Breakdown Voltage
104V
Drain to Source Voltage (Vdss)
104V
DS Breakdown Voltage-Min
104V
Frequency
1GHz
Gain
21dB
Gate to Source Voltage (Vgs)
13V
Lead Free
Lead Free
Max Operating Temperature
150°C
Output Power
33W
Package Quantity
60
Packaging
Rail/Tube
Polarity
N-CHANNEL
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
NXP BLF881,112 Datasheet
Download the complete datasheet for NXP BLF881,112 to view detailed technical specifications.
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