N-channel MOSFET with 104V Drain to Source Breakdown Voltage and 21A Continuous Drain Current. Features 1GHz operating frequency, 21dB gain, and 33W output power. Designed for high-frequency applications with a maximum operating temperature of 150°C. This RoHS compliant component is lead-free and supplied in rail/tube packaging.
Frequency1GHz
PolarityN-CHANNEL
Power33W
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Technical Specifications
NXP BLF881,112 technical specifications.
General
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 104V |
| Drain to Source Voltage (Vdss) | 104V |
| DS Breakdown Voltage-Min | 104V |
| Frequency | 1GHz |
| Gain | 21dB |
| Gate to Source Voltage (Vgs) | 13V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Output Power | 33W |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF881,112 Datasheet
Download the complete datasheet for NXP BLF881,112 to view detailed technical specifications.
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