
N-channel MOSFET with 104V Drain to Source Breakdown Voltage and 21A Continuous Drain Current. Features 1GHz operating frequency, 21dB gain, and 33W output power. Designed for high-frequency applications with a maximum operating temperature of 150°C. This RoHS compliant component is lead-free and supplied in rail/tube packaging.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NXP BLF881,112 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 104V |
| Drain to Source Voltage (Vdss) | 104V |
| DS Breakdown Voltage-Min | 104V |
| Frequency | 1GHz |
| Gain | 21dB |
| Gate to Source Voltage (Vgs) | 13V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Output Power | 33W |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for NXP BLF881,112 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
