N-channel MOSFET with 104V drain-to-source breakdown voltage and 21A continuous drain current. Features 860MHz maximum frequency, 21dB gain, and 140W maximum output power. Designed for surface mount applications with a 13V gate-to-source voltage. Operates from -65°C to 150°C, is lead-free, and RoHS compliant.
Frequency860MHz
Voltage Rating104V
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
NXP BLF881S,112 technical specifications.
General
Continuous Drain Current (ID)
21A
Drain to Source Breakdown Voltage
104V
Drain to Source Voltage (Vdss)
104V
Frequency
860MHz
Gain
21dB
Gate to Source Voltage (Vgs)
13V
Lead Free
Lead Free
Max Frequency
860MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Output Power
140W
Mount
Surface Mount
Number of Elements
1
Output Power
33W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
RoHS Compliant
Yes
Test Voltage
50V
Voltage Rating
104V
Compliance
RoHS
Compliant
Datasheet
NXP BLF881S,112 Datasheet
Download the complete datasheet for NXP BLF881S,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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