UHF Power LDMOS Transistor featuring N-channel polarity. This RF MOSFET offers a continuous drain current of 36A and a drain-to-source breakdown voltage of 110V. Operating at 860MHz, it delivers 250W of output power with a gain of 21dB. Designed with LDMOS technology, it is RoHS compliant and lead-free, with a maximum operating temperature of 150°C.
Frequency860MHz
Voltage Rating110V
Current Rating36A
PolarityN-CHANNEL
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Technical Specifications
NXP BLF888A,112 technical specifications.
General
Continuous Drain Current (ID)
36A
Current Rating
36A
Drain to Source Breakdown Voltage
110V
Drain to Source Voltage (Vdss)
110V
DS Breakdown Voltage-Min
110V
Frequency
860MHz
Gain
21dB
Gate to Source Voltage (Vgs)
11V
Lead Free
Lead Free
Max Operating Temperature
150°C
Output Power
250W
Package Quantity
20
Packaging
Tray
Polarity
N-CHANNEL
RoHS Compliant
Yes
Technology
LDMOS
Test Voltage
50V
Voltage Rating
110V
Compliance
RoHS
Compliant
Datasheet
NXP BLF888A,112 Datasheet
Download the complete datasheet for NXP BLF888A,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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