UHF Power LDMOS Transistor featuring N-channel polarity. This RF MOSFET offers a continuous drain current of 36A and a drain-to-source breakdown voltage of 110V. Operating at 860MHz, it delivers 250W of output power with a gain of 21dB. Designed with LDMOS technology, it is RoHS compliant and lead-free, with a maximum operating temperature of 150°C.
Frequency860MHz
Voltage Rating110V
Current Rating36A
PolarityN-CHANNEL
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Technical Specifications
NXP BLF888A,112 technical specifications.
General
| Continuous Drain Current (ID) | 36A |
| Current Rating | 36A |
| Drain to Source Breakdown Voltage | 110V |
| Drain to Source Voltage (Vdss) | 110V |
| DS Breakdown Voltage-Min | 110V |
| Frequency | 860MHz |
| Gain | 21dB |
| Gate to Source Voltage (Vgs) | 11V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Output Power | 250W |
| Package Quantity | 20 |
| Packaging | Tray |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Technology | LDMOS |
| Test Voltage | 50V |
| Voltage Rating | 110V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF888A,112 Datasheet
Download the complete datasheet for NXP BLF888A,112 to view detailed technical specifications.
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