The BLF888B,112 N-CHANNEL MOSFET features a continuous drain current of 38A and a drain to source breakdown voltage of 104V. It operates at a frequency of 860MHz and has a gate to source voltage of 1.9V. The device is capable of delivering an output power of 250W and is compliant with RoHS regulations. It is packaged in a 20-piece rail/tube configuration and has a maximum operating temperature of 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NXP BLF888B,112 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Continuous Drain Current (ID) | 38A |
| Drain to Source Breakdown Voltage | 104V |
| Drain to Source Voltage (Vdss) | 104V |
| Frequency | 860MHz |
| Gain | 21dB |
| Gate to Source Voltage (Vgs) | 1.9V |
| Max Operating Temperature | 150°C |
| Output Power | 250W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for NXP BLF888B,112 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
