The BLF888B,112 N-CHANNEL MOSFET features a continuous drain current of 38A and a drain to source breakdown voltage of 104V. It operates at a frequency of 860MHz and has a gate to source voltage of 1.9V. The device is capable of delivering an output power of 250W and is compliant with RoHS regulations. It is packaged in a 20-piece rail/tube configuration and has a maximum operating temperature of 150°C.
Frequency860MHz
PolarityN-CHANNEL
Power250W
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Technical Specifications
NXP BLF888B,112 technical specifications.
General
| Continuous Drain Current (ID) | 38A |
| Drain to Source Breakdown Voltage | 104V |
| Drain to Source Voltage (Vdss) | 104V |
| Frequency | 860MHz |
| Gain | 21dB |
| Gate to Source Voltage (Vgs) | 1.9V |
| Max Operating Temperature | 150°C |
| Output Power | 250W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF888B,112 Datasheet
Download the complete datasheet for NXP BLF888B,112 to view detailed technical specifications.
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