The NXP BLF8G22LS-200GV,12 is a surface mount FET transistor with a drain to source breakdown voltage of 65V and an output power of 200W. It operates over a temperature range of -65°C to 225°C and is RoHS compliant. This transistor has a gain of 20dB and a maximum frequency of 2.17GHz. It is available in a rail/ tube packaging with 96 devices per package.
Frequency2.17GHz
MountingSurface Mount
Power200W
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Technical Specifications
NXP BLF8G22LS-200GV,12 technical specifications.
General
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 2.17GHz |
| Gain | 20dB |
| Gate to Source Voltage (Vgs) | 13V |
| Max Frequency | 2.17GHz |
| Min Frequency | 2.11GHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 200W |
| Package Quantity | 96 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF8G22LS-200GV,12 Datasheet
Download the complete datasheet for NXP BLF8G22LS-200GV,12 to view detailed technical specifications.
No datasheet is available for this part.